Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiS<i>_x</i>-NbS<i>_x</i> Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabrication

The scalable and conformal synthesis of two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures is a persisting challenge for their implementation in next-generation devices. In this work, we report the nanometer-thick 2D TMDC consisting TiSx-NbSx on both planar 3D structures using atomic layer deposition (ALD) at low temperatures (200–300 °C). To end, process was developed growth NbSx by thermal ALD (tert-butylimido)-tris-(diethylamino)-niobium (TBTDEN) H2S gas. This complemented TiSx heterostructures. Precise thickness control individual material layers demonstrated fabricating multilayer (5-layer) with independently varied thicknesses. were successfully deposited large-area substrates as well over nanowire array demonstrating scalability conformality heterostructure process. current study demonstrates advantages conformally substrate precise temperatures. makes application nanoelectronics promising BEOL FEOL containing high-aspect-ratio structures.